Endotaxial silicide nanowires: A review
نویسندگان
چکیده
Available online 18 May 2011
منابع مشابه
Endotaxial silicide nanowires.
We demonstrate the growth of self-assembled nanowires of cobalt silicide on Si(111), (100), and (110) substrates during deposition of Co onto a heated Si substrate. Silicide islands form via an endotaxial mechanism, growing into the substrate along inclined Si{111} planes, which breaks the symmetry of the surface and leads to a long, thin nanowire shape. During growth, both the length and width...
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We report in situ observations of the growth of endotaxial CoSi(2) nanowires on Si(110) using an ultrahigh vacuum transmission electron microscope with a miniature electron-beam deposition system located above the pole-piece of the objective lens. Metal deposition at 750-850 °C results in formation of coherently strained silicide nanowires with a fixed length/width (L/W) aspect ratio that depen...
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Ni-silicide/Si nanowires were fabricated by atomic force microscope nano-oxidation on silicon-on-insulator substrates, selective wet etching, and reactive deposition epitaxy. Ni-silicide nanocrystal-modified Si nanowire and Ni-silicide/Si heterostructure multi-stacked nanowire were formed by low- and high-coverage depositions of Ni, respectively. The Ni-silicide/Si Schottky junction and Ni-sili...
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Single-crystalline cobalt silicide/SiO(x) nanocables have been grown on Co thin films on an SiO(2) layer by a self-catalysis process via vapor-liquid-solid mechanism. The nanocables consist of a core of CoSi nanowires and a silicon oxide shell with a length of several tens of micrometers. In the confined space in the oxide shell, the CoSi phase is stable and free from agglomeration in samples a...
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We investigate the structure, stability, and electronic properties of yttrium silicide nanowires with AlB2-type structure, using ab initio calculations. The results confirm experimental findings that yttrium silicide nanowires are robust and conductive. In particular, the dependencies on nanowire thickness are analyzed. Furthermore, calculations show that the vacancy formation in stoichiometric...
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تاریخ انتشار 2011